New Product Introduction

Infineon 1200 V CoolSiC™ Schottky diode G5 in TO247-2 package

1200 V CoolSiC™ Schottky diodes G5 now available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes commonly used today

Infineon 1200 V CoolSiC™ product image

1200 V CoolSiC™ Schottky diodes G5 now available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes commonly used today. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative.


Key features

  • No reverse recovery current, no forward recovery voltage
  • Temperature-independent switching behavior
  • Low forward voltage even at high operating temperature
  • Tight forward voltage distribution
     

Additional features

  • High surge current capability 
  • Real two-pin package with 8.7 mm creepage and clearance distances
  • Easy plug and play with silicon diodes 
  • System efficiency improvement over Si diodes 
  • Enabling higher frequency / increased power density solutions
  • System reliability improvement

 

Applications

  • EV-Charging
  • Welding
  • CAV
  • Solutions for solar energy systems
  • Motor and control drives
  • UPS
  • Industrial SMPS

Infineon 1200 V CoolSiC™ Schottky diode G5 | EBV Elektronik

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