New Product Introduction

Fujitsu MB85RS64VY automotive FRAM-family with 64 Kb

New Product of Automotive FRAM-Family With 64 Kb

Fujitsu Electronics Europe GmbH MB85RS64VY product image

MB85RS64VY is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. MB85RS64VY adopts the Serial Peripheral Interface (SPI). It is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in it can be used for 1013 read/write operations, which is a significant improvement over the number of read/write operations supported by Flash memory and EEPROM.

Key features

  • Fast Overwrite: No Limitation Due to Block Access, No Erase Time, No Writing Pause Time
  • High Endurance: 10 Trillion Read&Write Cycles
  • Low Power Consumption: Charge Pump Not Necessary
  • Operating Temperature: -40° C to 125° C: Data Retention 30 Years at 85° C


Additional features:

  • Bit Configuration: 8,192 Words x 8 Bits
  • Serial Peripheral Interface: SPI (Serial Peripheral Interface) Correspondent to SPI Mode 0 (0, 0) and Mode 3 (1, 1)
  • Operating Frequency: 25 MHz (max, At 2.7 V to 4.5 V), 33 MHz (max, At 4.5 V to 5.5 V)
  • High Endurance: 1013 Times/Byte
  • Data Retention: 30 Years (+85° C)
  • 10.9 Years (+105° C)
  • 3.3 Years (+125° C) or More
  • Under Evaluation for More than 3.3 Years (+125° C)
  • Operating Power Supply Voltage: 2.7 V to 5.5 V
  • Low Power Consumption: Operating Power Supply Current
  • 1.8 mA (max at 25 MHz), 2.3 mA (max at 33 MHz)
  • Standby Current 30 µa (max)
  • Sleep Current 12 µa (max)
  • Operation Ambient Temperature Range: -40° C to +125° C
  • Package: 8-Pin Plastic SOP (FPT-8P-M10)
  • 8-Pin Plastic SON (LCC-8P-M04)
  • RoHS Compliant


  • Direct Data Logging
  • Parameter Storage
  • Back-Up Memory
  • Real-Time Data Writing


Fujitsu Electronics Europe GmbH MB85RS64VY | EBV Elektronik

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