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Vishay SISS32LDN N-channel 80 V (D-S) MOSFET

Next-Generation 80 V TrenchFET® Portfolio with low RDS(ON)

Vishay SISS32LDN product picture

Next-Generation 80 V TrenchFET® Portfolio with low RDS(ON), Qg, and COSS for reducing all the elements of power loss. 56% COSS reduction from the previous generation and minimized switching related power loss in synchronous rectification.

 

Key features

  • Very low RDS x Qg figure-of-merit (FOM)
  • Tuned for the lowest RDS x Qoss FOM
  • Low RDS(ON), Qg and COSS reduce all elements of power loss
  • 100% Rg and UIS tested

 

Additional features

  • TrenchFET® Gen IV power MOSFET
  • Very low RDS x Qg figure-of-merit (FOM)
  • Tuned for the lowest RDS - Qoss FOM
  • 100 % Rg and UIS tested

 

Applications

  • Synchronous Rectification
  • Primary-Side Switch
  • DC/DC Converters
  • Motor-Drive Switches
  • Battery and Load Switches
  • Industrial

 

Available tools

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Vishay SISS32LDN N-Channel 80 V (D-S) MOSFET | EBV Elektronik

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