New Product Information

Vishay SiRA99DP first-ever -30 V P-Channel MOSFET

Vishay Intertechnology introduces the new SiRA99DP -30 V P-channel MOSFET with the lowest RDS(ON) and RDS x Qg FOM in its class

Vishay SiRA99DP product picture

Vishay Intertechnology introduces the new SiRA99DP -30 V P-channel MOSFET with the lowest RDS(ON) and RDS x Qg FOM in its class. When using N-channel MOSFETs at the high-side, a charge pump is mandatory. Using the Vishay SiRA99DP compared to N-channel devices eliminates the need for a drive circuit and charge pump so it reduces component count and simplifies designs. The SiR99DP, therefore, achieves high efficiency with fewer components and enables higher power density.

 

Key features

  • Very Low RDS(ON) Minimizes Voltage Drop and Reduces Conduction Losses
  • Eliminates The Need for Charge Pump
  • Features Best-in-Class RDS x Qg FOM
  • Very Low Qgd with Short Miller Plateau

 

Additional features

  • Best-in-class RDS(ON)
  • Typical RDS(ON) = 1.3 mΩ
  • Maximum RDS(ON) = 1.7 mΩ
  • Minimizes I2R voltage drop across power path
  • Reduces conduction losses
  • Achieves high efficiency with fewer components, simplifying designs
  • Enables higher power density

 

Applications

  • Adapter and Charger Switch
  • Battery and Circuit Protection
  • OR-ing
  • Load Switch
  • Motor Drive Control

Vishay SiRA99DP First-Ever -30 V P-Channel MOSFET | EBV Elektronik

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