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Vishay SiR870BDP N-channel 100 V (D-S) MOSFET | EBV Elektronik

N-Channel 100 V (D-S) MOSFET

Vishay SiR870BDP product picture

Next-Generation 100V TrenchFET® Portfolio with low RDS(ON), Qg and COSS to reduce all elements of power loss for the more efficient primary-side switching.


Key features

  • N-Channel 100-V (D-S) MOSFET PowerPAK SO-8
  • Very low RDS x Qg figure-of-merit (FOM)
  • Tuned for the lowest RDS x Qoss FOM
  • 100% Rg and UIS tested


Additional features

  • TrenchFET® Gen IV power MOSFET
  • Very low ON-resistance RDS(ON):
    • RDS(on) max. at VGS = 10 V: 0.0061Ω
    • RDS(on) max. at VGS = 4.5 V: 0.0077Ω
  • Tuned for the lowest RDS(ON) x Qoss FOM



  • Synchronous Rectification
  • Primary Side Switch
  • DC/DC Converters
  • Power Supplies
  • Motor Drive Control
  • Battery and Load Switches


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Vishay SiR870BDP N-Channel 100 V (D-S) MOSFET | EBV Elektronik

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Related parts

  • SiR870BDP-T1-RE3

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