New Product Introduction

ON Semiconductor NTHL080N120SC1 n‐channel silicon carbide MOSFET

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon

ON Semiconductor NTHL080N120SC1 product image

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Two different part numbers for industrial grade (NTHL080N120SC1) and automotive grade (NVHL080N120SC1) are available.

 

Key features

  • 1200V rated
  • High Speed Switching and Low Capacitance
  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
  • Qualified for Automotive According to AEC−Q101 available

 

Additional features

  • 100% UIL Tested
  • Pb−Free, RoHS Compliant
  • Qualified for Automotive According to AEC−Q101 available

 

Applications​

  • PFC
  • Boost Inverter
  • PV Charging
  • Automotive grade version:
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • Automotive Auxiliary Motor Drive

ON Semi NTHL080N120SC1 silicon carbide MOSFET | EBV Elektronik

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