New Product Introduction

ON Semiconductor NCP5106/NCP5304 high-voltage power MOSFET

The NCP5304 & NCP5106 are spome High Voltage Power gate Drivers providing two outputs for direct drive of 2 N−channel power MOSFETs or IGBTs arranged in a half−bridge configuration.

ON Semiconductor NCP5106/NCP5304 product image

The NCP5304 & NCP5106 are spome  High Voltage Power gate Drivers providing two outputs for direct drive of 2 N−channel power MOSFETs or IGBTs arranged in a half−bridge configuration.

They are using the bootstrap technique to ensure a proper drive of the high−side power switch. The drivers are working with 2 independent inputs.

 

Key features

  • High Voltage Range: up to 600 V
  • Negative Current Injection Characterized Over the Temperature Range
  • High and Low Drive Outputs
  • Up to VCC Swing on Input Pins

 

Additional features

  • High-voltage range: up to 600 V
  • dv/dt immunity 50 V/nsec
  • Gate drive supply range from 10 V to 20 V
  • High and low DRV outputs
  • 3.3 V and 5 V input logic compatible
  • Up to VCC swing on input pins
  • Matched propagation delays between both channels
  • Outputs in phase with the inputs
  • Independent logic inputs to accommodate all topologies
  • Under voltage lock out (UVLO) for both channels

 

Applications

  • ​Half-bridge Power converters
  • Full-bridge converters
  • Any Complementary Drive Converters