New Product Introduction

ON Semiconductor FFSB20120A SiC diode, 1200V, 20A, D2PAK

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon

ON Semiconductor FFSB20120A product image

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

 

Key features

  • Max Junction Temperature 175°C
  • Avalanche Rated 200 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient

 

Additional features

  • Max Junction Temperature 175°C
  • Avalanche Rated 200 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery/No Forward Recovery

 

Applications

  • General Purpose
  • SMPS, Solar Inverter, UPS
  • Power Switching Circuits

 

ON Semiconductor FFSB20120A SiC diode | EBV Elektronik

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