New Product Introduction

NXP Semiconductors MRFX600H high ruggedness LDMOS transistor

The MRFX600H, MRFX600HS and MRFX600GS high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications

NXP Semiconductors MRFX600H product image

Overview

The MRFX600H, MRFX600HS and MRFX600GS high ruggedness devices are designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Their unmatched input and output design supports frequency use from 1.8 to 400 MHz.


Key features

  • Unmatched input and output allowing wide frequency range utilization
  • Characterized from 30 to 65 V for extended power range
  • High breakdown voltage for enhanced reliability
  • Qualified up to a maximum of 65 VDD operation

 

Additional features

  • Output impedance fits a 4:1 transformer
  • Device can be used single-ended or in a push-pull configuration
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • Included in our product longevity program with assured supply for a minimum of 15 years after launch.
  • RoHS compliant


Applications

  • Industrial, scientific, medical (ISM)
  • -Laser generation
  • -Plasma etching
  • -Particle accelerators
  • -MRI and other medical applications
  • -Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
  • -HF and VHF communications
  • -Radar
  • Mobile Radio
  • -HF and VHF communications
  • -PMR base stations

NXP Semiconductors MRFX600H LDMOS transistor | EBV Elektronik

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