New Product Introduction

NXP Semiconductors MRFX035H high ruggedness LDMOS transistor

The MRFX035H is 35W CW high ruggedness device designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications

NXP Semiconductors MRFX035H product image

The MRFX035H is 35W CW high ruggedness device designed for use in high VSWR industrial, medical, broadcast, aerospace and mobile radio applications. Its unmatched input and output design supports frequency use from 1.8 to 512 MHz. Built on NXP 65V technology, its high breakdown voltage deliver enhanced reliability.
 


Key features

  • Qualified up to a maximum of 65 VDD operation
  • Unmatched input and output allowing wide frequency range utilization
  • High breakdown voltage for enhanced reliability
  • 50 ohm native output impedance

 

Additional features

  • Device can be used single-ended or in a push-pull configuration
  • Characterized from 30 to 65 V for extended power range
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • Included in our product longevity program with assured supply for a minimum of 15 years after launch.
  • RoHS compliant


Applications

  • Industrial, scientific, medical (ISM)
  • Laser generation
  • Plasma generation
  • Plasma accelerators
  • MRI, RF ablation and skin treatment
  • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast

NXP Semiconductors MRFX035H LDMOS transistor | EBV Elektronik

Display portlet menu

Do you have a Question?

Contact EBV

If you need any assistance, please click below to find your closest EBV sales office.

Links and documents



Related markets



Related technologies