New Product Introduction

Infineon Technologies RF SP3T Switch BGS13S4N9 with enhanced ESD level

The BGS13S4N9 RF MOS switch is specifically designed for cell phone and mobile applications

Infineon Technologies RF SP3T Switch BGS13S4N9 product image

RF SP3T switch with enhanced ESD level.

The BGS13S4N9 RF MOS switch is specifically designed for cell phone and mobile applications. Any of the 3 ports can be used as termination of the diversity antenna handling up to 30 dBm. It offers outstanding ESD robustness of 1kV.

 

Key features

  • Low insertion loss
  • Low harmonic generation
  • High port-to-port-isolation
  • 0.1 to 3.0 GHz coverage

 

Additional features

  • 3 high-linearity TRx paths with power handling capability of up to 30 dBm
  • No decoupling capacitors required if no DC applied on RF lines
  • On-chip control logic including ESD protection
  • General Purpose Input-Output (GPIO) Interface
  • Small form factor 1.1mm x 1.1mm x 0.375mm
  • No power supply blocking required
  • High EMI robustness
  • RoHS and WEEE compliant package
  • Very compact size
  • Low insertion loss levels
  • Designed to reduce antenna interfering signals
  • Ensure robustness at antenna termination port

 

Applications

  • Wireless communication
  • Mobile devices (Edge / CDMA2000 / LTE / WCDMA)

 

Available tools

  • EVALBGS13S4N9TOBO1

Infineon Technologies RF SP3T Switch BGS13S4N9 | EBV Elektronik

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