New Product Introduction

Infineon New 1200 V TRENCHSTOP™ IGBT6 technology

Next generation 1200 V IGBT technology – next level efficiency by improvement both conduction and switching losses

Infineon New 1200 V TRENCHSTOP™ IGBT6 product image

Next generation 1200 V IGBT technology – next level efficiency by improvement both conduction and switching losses.

The TRENCHSTOP™ IGBT6 is released in two product families – low conduction losses optimized S6 series and improved switching losses H6 series.

 

Key features

  • Low conduction losses with 1.85 V Vce(sat) for S6 series
  • High Rg controllability
  • Full rated, soft and robust freewheeling diode
  • Low EMI

 

Additional features

  • Best combination of switching and conduction losses for switching frequency 15 – 40 kH
  • Highest current of 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
  • Easy, plug & play replacement of predecessor HighSpeed3 H3 IGB
  • 0.15% system efficiency improvement when changing from H3 to S6 in TO-247-31
  • 0.20% system efficiency improvement when changing from H3 to S6 in TO-247PLUS 4pin
  • Suitable for high power designs above 20 kW with less paralleling
  • Easy adjustment of the device to the switching speed required in application due to high Rg controllability

 

Applications

  • Welding machine inverter HB or FB topology
  • UPS main inverter T-type, B6 topology
  • Solar Boost and main inverter
  • Motor drive B6 technology
  • PFC, Boost


Available tools

EVAL-IGBT-1200V-247

Family: Gate Driver, IGBT Discrete

Description: Adaptable double pulse tester for IGBTs in TO-247 4pin package

SP001845836

Infineon New 1200 V TRENCHSTOP™ IGBT6 technology | EBV Elektronik

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