New Product Introduction

Infineon GaN EiceDRIVER™ single-channel isolated gate driver ICs

Drive high voltage gallium nitride (GaN) HEMTs with the most robust and efficient single-channel isolated GaN EiceDRIVER™ IC on the market

Infineon GaN EiceDRIVER™ product picture

Drive high voltage gallium nitride (GaN) HEMTs with the most robust and efficient single-channel isolated GaN EiceDRIVER™ IC on the market. 

CoolGaN™ e-mode HEMTs are best driven by Infineon’s EiceDRIVER™ ICs, the 1EDF5673K, 1EDF5673F and 1EDS5663H. They ensure robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.

 

Key features

  • Low ohmic outputs: Source: 0.85Ω Sink: 0.35Ω
  • Timing: Minimum output pulse width: 18ns Propagation delay accuracy: 13ns
  • Single-channel galvanic isolation
  • Integrated galvanic isolation

 

Additional features

  • Single-channel galvanic isolation: 
    Functional: VIO= 1500VDC 
    - VIOWM = 510Vrms (16-pin DSO) 
    - VIOWM= 460Vrms (LGA 5x5) 
    - Reinforced: VIOTM = 8000Vpk 
    - (VDE 0884-10 pending) 
    - VIOWM = 1420 VDC 
    - CMTI min: 200V/ns
  • Firmly hold gate voltage at zero, during offphase
    - Avoids spurious GaN switch turn-on
    - Up to 50% lower dead-time losses
  • Configurable and constant GaN switching slew-rates, across wide range of switching frequency and duty-cycle enable a robust and efficient SMPS design and short time-to-market
  • Integrated galvanic isolation
    - Robust operation in hard-switching applications
    - Safe isolation where needed
  • Positive and negative gate drive currents — fast turn-on / turn-off GaN switch slew-rates

 

Applications

  • Server
  • Telecom DC-DC
  • Datacom
  • Adapter
  • Charger
  • Wirless Charging
  • SMPS


Available tools

CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ EVAL_1EDF_G1_HB_GAN

  • Simple GaN half-bridge with dedicated GaN driver ICs
  • Capable of multi-MHz switching frequencies
  • Zero reverse-recovery – can shift between hard or soft-switching
  • GaN transistors feature topside cooling for high power dissipation
  • provides a platform to evaluate GaN in the universal half-bridge topology, as a building block to nearly all converter and inverter applications.


Components:

  • CoolGaN™ 600 V e-mode HEMTs (IGOT60R070D1)
  • GaN EiceDRIVER™ (1EDF5673K)


Order Code: EVAL1EDFG1HBGANTOBO1

Infineon GaN EiceDRIVER™ single-channel ICs | EBV Elektronik

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