New Product Introduction

Infineon CoolGaN™ 600 V e-mode GaN HEMTs

The enhancement mode concept offers fast turn-on and turn-off speed as well as a better path towards integration either on a chip or package level

Infineon CoolGaN™ product picture

Gallium nitride (GaN) offers fundamental advantages over silicon. In particular the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific on resistance and smaller capacitances compared to silicon switches, which makes GaN HEMTs great for high speed switching.

The enhancement mode concept offers fast turn-on and turn-off speed as well as a better path towards integration either on a chip or package level. CoolGaN™ enables simpler half-bridge topologies.

 

Key features

  • Best FOM of 600 V power devices
  • Excellent for hard and soft switching topologies
  • Optimized for turn-on and turn-off
  • The cutting-edge technology for innovative solutions and high volumes

 

Additional features

  • Highest efficiency for SMPS
  • Highest power density, small and light design
  • Surface mount packaging ensures that switching capabilities of GaN are fully accessed
  • Easy-to-use thanks to a compelling driver IC portfolio

 

Applications

  • Server SMPS
  • Telecom
  • Adapter and charger
  • Wireless Charging
  • Class D audio


Available tools

  • EVAL_1EDF_G1_HB_GAN:

    CoolGaN™, EiceDRIVER™

    GaN half-bridge evaluation platform

    - 1EDF5673K

    - IGOT60R070D1

 

  • EVAL_2500W_PFC_GAN_A:

    High/Low Side Switch, MOSFET, Gate Driver, CoolSET™

    2.5 kW full-bridge PFC high-efficiency evaluation board using CoolGaN™ 600V e-mode HEMTs

    - 1EDI20N12AF

    - 1EDI60N12AF

    - 2EDN7523G

    - 2EDN7524F

    - BAT165

    - ICE2QR2280G

    - ICE3PCS01G

    - IGO60R070D1

    - IPT65R033G7

Infineon CoolGaN™ 600 V e-mode GaN HEMTs | EBV Elektronik

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