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Infineon BGSX22G5A10 high power antenna cross switch (DPDT)

The BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications

Infineon BGSX22G5A10 product image

The BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally.


Key features

  • RF CMOS DPDT antenna cross switch with power handling capability of up to 37 dBm
  • Ultra-low insertion loss and harmonics generation
  • 0.1 to 6.0 GHz coverage
  • High port-to-port-isolation

 

Additional features:

  • No decoupling capacitors required if no DC applied on RF lines
  • General Purpose Input-Output (GPIO) Interface
  • Small form factor 1.1mm x 1.5mm
  • No power supply blocking required
  • High EMI robustness
  • RoHS and WEEE compliant package
  • Operates up to 6 GHz frequency range (5G)
  • Allows the alternation of antennas, RF paths
  • Decrease correlations between antennas
  • Small footprint, easy for integrations
  • PCB and costs savings


Applications

  • Multi-mode LTE and WCDMA multi antenna applications

Infineon BGSX22G5A10 RF MOS switch | EBV Elektronik

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