New Product Introduction

Infineon BGAU1A10 and BGAV1A10 LTE LNA with gain control

In high gain mode the BGAV1A10 and BGAU1A10 offers best noise figure to ensure high data rates even on the LTE cell edge

Infineon BGAU1A10 and BGAV1A10 product image

The LTE data rate can be significantly improved by using the high gain LNA. The integrated gain control and bypass function increases the overall system dynamic range and leads to more flexibility in the front-end. In high gain mode the BGAV1A10 and BGAU1A10 offers best noise figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption. Thanks to the MIPI control interface, control lines are reduced to a minimum.


Key features

  • Operating frequencies: 5.15 - 5.925 GHz
  • Insertion power gain: 20.5 dB
  • Gain dynamic range: 27 dB
  • Low noise figure: 1.6 dB

 

Additional features:
 

  • Low current consumption: 5.0 m
  • Multi-state control: Gain- and Bypass-Modes
  • Small ATSLP leadless package
  • Ensures higher LTE data rates due to high gain featur
  • Higher system flexibility due to integrated gain control
  • MIPI controlled device helps saving control lines in the system


Applications

  • Smartphones

Infineon BGAU1A10 and BGAV1A10 LTE LNA | EBV Elektronik

Display portlet menu

Do you have a Question?

Contact EBV

If you need any assistance, please click below to find your closest EBV sales office.

Related links



Related markets



Related technologies