New Product Introduction

Infineon BGA5x1BN6 family new low noise amplifier

The BGA5x1BN6 is a high gain LNA family (+18 dBm) for LTE

Infineon BGA5x1BN6 family product image

The BGA5x1BN6 is a high gain LNA family (+18 dBm) for LTE. The devices cover a wide frequency range, low (600 - 1000 MHz) mid (1805 - 2200 MHz) and high band (2300 - 2690 MHz).

This product family provides best-in-class low noise figure and competitive insertion loss levels. The operating supply voltage range is from 1.5 V to 3.6 V.

Infineon BGA5x1BN6 family is based upon Infineon Technologies‘ newest B9HF Silicon Germanium technology. The devices feature a single-line two-state control (Bypass- and High gain-Mode). OFF-state can be enabled by powering down VCC.


Key features

  • High Power gain 18.0 dB, 19.3 dB, 18.5 dB
  • Insertion Loss in by pass mode 3.0 dB , 4.7 dB, 6.0 dB
  • Low current consumption ,5.0mA, 5.0mA, 7.2mA
  • Silicon Germanium technology B9HF B9HF B9HF


Additional features:
 

  • Frequency range: 600 - 1000 MHz, 1805 - 2200 MHz, 2300 - 2690 MHz
  • Control: 
    •  Multi-state control: Bypass- and high gain-Mode 
    •  Multi-state control: Bypass- and high gain-Mode 
    •  Multi-state control: Bypass- and high gain-Mode
  • Size: 0.7 x 1.1 mm2, 0.7 x 1.1 mm2, 0.7 x 1.1 mm2
  • Package: TSNP-6-2, TSNP-6-2 and TSNP-6-10, TSNP-6-10
  •  System sensitivity increased by 0.4 dB

 

  • High input power up to +25 dBm
  • Up to 75% PCB space savings
  • Increased data rate


Applications

  • LTE
  • GSM

Infineon BGA5x1BN6 family new low noise amplifier | EBV Elektronik

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