New Product Information

Vishay SIZF300DT dual N-channel 30 V (D-S) MOSFET with Schottky diode

Vishay introduces a new 30 V N-channel MOSFET half-bridge power stage that combines a high side TrenchFET MOSFET and low side SkyFET MOSFET

Vishay SIZF300DT product picture

Vishay introduces a new 30 V N-channel MOSFET half-bridge power stage that combines a high side TrenchFET MOSFET and low side SkyFET MOSFET with monolithically integrated Schottky diode in one compact PowerPAIR 3.3 by 3.3 mm package. The Vishay Siliconix SiZF300DT delivers increased power density and efficiency while reducing component counts and simplifying designs. It is 65 % smaller than dual devices in 6 by 5 mm packages with similar ON-resistance, making it one of the most compact integrated products on the market.

 

Key features

  • MOSFETs and Schottky diode integrated in one compact PowerPAIR 3.3 by 3.3 mm package
  • Optimized for high current applications
  • Designed for fast switching
  • Delivers increased power density and efficiency

 

Additional features

  • High side TrenchFET® MOSFET and low side SkyFET® MOSFET with Schottky diode integrated into one compact PowerPAIR 3.3 by 3.3 mm package
    • Internally connected in a half-bridge configuration
    • Low-side MOSFET and Schottky diode are monolithically integrated into SkyFET MOSFET
    • Delivers increased power density and efficiency, while reducing component counts and simplifying designs
  • Optimized for high current applications
    • ON-resistance down to 4.5 mΩ at 10 V for the Channel 1 MOSFET and 1.84 mΩ at 10 V for the Channel 2 MOSFET
  • Designed for fast switching
    • Low gate charge of 6.9 nC (Channel 1) and 19.4 nC (Channel 2)
  • 100 % Rg- and UIS-tested, RoHS-compliant, and halogen-free

 

Applications

  • Synchronous buck
  • Half-bridge power stage
  • DC/DC converters
  • POL
  • Synchronous buck converter
  • Telecom DC/DC

 

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Vishay SIZF300DT MOSFET with Schottky Diode | EBV Elektronik

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Related parts

  • SIZF300DT-T1-GE3


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