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Vishay SISS22DN N-channel 60 V (D-S) MOSFET

SiSS22DN 60 V in PowerPAK® 1212-8S features less than 4 mΩ

Vishay SISS22DN product picture

SiSS22DN 60 V in PowerPAK® 1212-8S features less than 4 mΩ. The lowest maximum RDS(ON) in its class reduces conduction loss and increases power density. Excellent RDS x Qg and RDS x Qoss FOM enables efficiency improvement.

 

Key features

  • Excellent RDS(ON) x Qg and RDS(ON) x Qoss FOM enables efficiency improvement
  • Very low Qg reduces power loss from gate driving
  • Very low Qoss cuts unplanned power loss during diode conduction
  • The lowest maximum RDS(ON) in its class

 

Additional features

  • Achieves higher peak efficiency
  • More efficiency at full load
  • Drop-in upgrade
  • RDS(ON) less than 4 mΩ
  • The lowest maximum RDS(ON) in its class
  • Reduce conduction loss and increase power density

 

Applications

  • Synchronous Rectification
  • Primary-Side Switches
  • Topologies for DC/DC Conversion
  • Buck-Boost Converters
  • Motor Drive Control
  • Battery Protection and Switching

 

Available tools

SPICE models, RC Thermal Model, MOSFET selector Tool, and Parametric search:

Vishay SISS22DN N-Channel 60 V (D-S) MOSFET | EBV Elektronik

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