New Product Information

Vishay SIJ188DP N-channel 60 V (D-S) MOSFET

SiJ188DP 60 V 3.85 mΩ in PowerPAK® SO-8L increases Efficiency with Class-Leading RDS x Qoss FOM

Vishay SIJ188DP product picture

SiJ188DP 60 V 3.85 mΩ in PowerPAK® SO-8L increases Efficiency with Class-Leading RDS x Qoss FOM, offering a robust solution for increasing power density with gull-wing leads to improve resilience for mechanical stress and TCE mismatch

 

Key features

  • FOM is 41% lower than the next best product
  • RDS(ON) is Less than 3.85 mΩ
  • Enables higher efficiency for PWM switching applications and DC/DC conversions
  • Gull-wing leads improve resilience for mechanical stress and TCE mismatch

 

Additional features

  • Increase Efficiency with Class-Leading RDS(ON) x Qoss FOM
  • Reduced power loss during diode conduction
  • Optimized for synchronous rectification
  • Robust Solution for Increasing Power Density
  • Gull-wing leads improve resilience for mechanical stress and TCE mismatch
  • Optimized for single-sided PCB
  • Package footprint is 52% smaller than DPAK
  • Package profile is 50% thinner than DPAK

 

Applications

  • Synchronous Rectification
  • power Supplies
  • Motor Drive Control
  • Battery Management Systems (BMS)

Vishay SIJ188DP N-Channel 60 V (D-S) MOSFET | EBV Elektronik

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