New Product Introduction

Infineon IR MOSFET™ 60 V/ 80 V/ 100 V for low VGS

EBV presents Infineon’s latest generation of 60 V, 80 V, and 100 V power MOSFETs in PQFN 2 x 2 package which utilizes very high end OptiMOS™ 5 logic level silicon

Infineon IR MOSFET™ 60 V/ 80 V/ 100 V product image

EBV presents Infineon’s latest generation of 60 V, 80 V, and 100 V power MOSFETs in PQFN 2 x 2 package which utilizes very high end OptiMOS™ 5 logic level silicon to achieve benchmark performance in high speed switching and small form factor applications.

 

Key features

  • Very small package footprint
  • Higher power density designs
  • Higher switching frequency
  • Reduced parts count wherever 5 V supplies are available

 

Additional features:

  • Driven directly from microcontrollers (slow switching)
  • System cost reduction
  • Very low FOM (RDS(on) x Qg/gd)
  • Optimized Qg, Coss, and Qrr for fast switching
  • Logic level compatibility
  • Tiny PQFN 2 x 2 mm package

 

Applications

  • Wireless charging
  • Telecom
  • Adapter

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