New Product Introduction

Infineon 700 V CoolMOS™ P7 SJ MOSFET™

Infineon’s latest 700 V superjunction MOSFET technology has been developed to serve today’s and tomorrow’s trends in flyback topologies

Infineon 700 V CoolMOS™ P7 SJ MOSFET™ product image

EBV presents the price/performance optimized 700 V CoolMOS™ P7 SJ MOSFET and in combination with the IPAK Short Lead with ISO-standoff package increased yields and cost reduction can be reached.

Infineon’s latest 700 V superjunction MOSFET technology has been developed to serve today’s and tomorrow’s trends in flyback topologies. The CoolMOS™ P7 is offering amazing performance gains compared to superjunction technologies used today, especially at high speed switching.

With IPAK Short Lead, Infineon offers a package with a well-defined mold feature at the bottom of the package body.

 

Key features

  • More effective cleaning in terms of residue removing
  • Resulting in better assembly yield
  • Larger effective creepage distance between legs
  • More suitable for charger application


Additional features:

  • Extremely low FOM RDS(on) x Eoss; lower Qg, Eon, and Eoff.
  • Highly performant technology
  • Low switching losses (EOSS)
  • Highly efficient
  • Excellent thermal behavior
  •  Allowing high speed switching
  • Integrated Zener diode
  • Optimized V(GS)th of 3 V with very narrow tolerance of ±0.5 V
  • Finely graduated portfolio
  • Cost competitive technology
  • Up to 2.4% efficiency gain and 12°K lower device temperature compared to C6 technology
  • Further efficiency gain at higher switching speed
  • Supporting less magnetic size with lower BOM costs
  • High ESD ruggedness up to HBM Class 2 level
  • Easy to drive and design in
  • Enabler for smaller form factors and high power density design
  • Excellent choice in selecting the best fitting product

 

Applications

  • Charger Applications

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