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CoolSiC™ MOSFET in Easy 1B, 2B

Combining the strengths of two great Infineon products: the Easy package, a bench-mark in low stray inductance and the 1200 V CoolSiC™ MOSFET enables customers to significantly reduce their system and operational costs. With regard to topology, these products meet the demand for EV charging applications such as high-frequency operation and large output variation of the DC-DC power stage.


Target applications

  • EV-Charging
  • DC/DC converter 
  • Welding
  • High Frequency Switching application
  • UPS systems 
  • Solar applications

 

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Features

  • CoolSiC™ MOSFET in Easy package for lowest stray inductance
  • Superior gate-oxide reliability
  • Enables higher fsw operation due to nearly 80% lower switching losses compared to Si
  • Intrinsic diode with low reverse-recovery charge
  • Highest threshold voltage of Vth > 4 V
  • Multiple switches in the small Easy package for a very compact solution
  • CoolSiC™ MOSFET as an addition to Infineon’s extensive chip portfolio


Key components

  • F4-23MR12W1M1_B11
  • F3L15MR12W2M1_B69


Benefits

  • Operation at higher switching speeds up to 50 kV/µs
  • Longer lifetime of converter system
  • Reduced system and operational costs due to high efficiency and reduced cooling effort
  • Increased power density
  • Highest robustness against parasitic turn-on
  • Easier system integration and reduction of manufacturing effort
  • Optimized hybrid module solutions for individual converter topologies

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