2ED2304S06F

650 V half bridge gate driver IC with integrated Bootstrap Diode (BSD)

Infineon's OPTIGA™ TPM component

Using Infineon thin-film-SOI technology, 2ED2304S06F provides excellent ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V. The output drivers features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V. Additionally, the offline clamping function provides an inherent protection of the parasitic turn-on by floating gate conditions when IC is not supplied.


Features

  • Infineon thin-film-SOI-technology
  • Fully operational to +650 V offset voltage
  • Integrated ultra-fast, low RDSON bootstrap diode
  • Output source/sink current capability +0.36 A/-0.7 A
  • Tolerant to negative transient voltage up to -100 V (pulse width is up 300 ns) given by SOI-technology
  • Gate drive supply range from 10 to 20 V
  • Independent under-voltage lockout for both channels
  • Short propagation delay and delay matching (60 ns, Maximum)
  • Schmitt trigger inputs with hysteresis and pull down
  • 3.3 V, 5 V and 15 V input logic compatible
  • DSO-8, RoHS compliant package


Target applications

  • Home appliances
  • Refrigerators
  • Motor control and drives
  • Power supplies


Benefits

  • Integrated Bootstrap Diode for reduced BOM cost
  • -100 V negative VS increased reliability / robustness
  • 50% lower level shift losses leads lower temperature operation and higher reliability
  • Latch-up immune increased reliability
  • Flexible, small PCB footprint, & easy to use device with footprint compatibility to IRS2304 / IR2304

Related segment

Smart cities

Megacities are looking for ways to make their infrastructure and energy systems smarter, safer and more power-efficient. Infineon plays an important role in achieving these objectives.