This N-Channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
11 A, 60 V, RDS(on) = 115 mΩ (Max) @ VGS = 10 V, ID = 5.5 A
Low Gate Charge (Typ. 4.8 nC)
Low Crss (Typ. 17 pF)
100% Avalanche Tested
Low Level Gate Drive Requirements Allowing Direct Operation form Logic Drivers