Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Key Features
Max Junction Temperature 175°C
Avalanche Rated 51 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery/No Forward Recovery
AEC−Q101 Qualified
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant