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These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high dense process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1V.
Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
Compact industry standard SOT-23 surface mount package