2N3055G by ON Semiconductor | GP BJTs | Avnet AMERICAS
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2N3055G

ON Semiconductor

Trans GP BJT NPN 60V 15A 3-Pin(2+Tab) TO-204 Tray

Manufacturer Part #: 2N3055G

Avnet Manufacturer Part #: 2N3055G


RoHS Compliant

Descriptions

Documents

Subs/Alternatives/Related

Information

The Bipolar Power Transistor is designed for high power audio, stepping motor and other linear applications. It can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, inverters or for inductive loads requiring higher safe operating area than the 2N3055.

Key Features

  • High Current-Gain - Bandwidth
  • Safe Operating Area
  • These Devices are Pb−Free and are RoHS Compliant

Technical Attributes

Description
Value
Find similar Parts
Lead Finish
Matte Tin
Maximum Collector Emitter Saturation Voltage
1.1@400mA@4A|3@3.3A@10A V
Supplier Package
TO-204
Minimum DC Current Gain
20@4A@4V|5@10A@4V
Maximum DC Collector Current
15 A
Maximum Collector Emitter Voltage
60 V
Operating Temperature
-65 to 200 °C
Maximum Collector Base Voltage
100 V
Product Dimensions
39.37 x 26.67 x 8.51 mm
Maximum Power Dissipation
115000 mW
Pin Count
3
Maximum Emitter Base Voltage
7 V
Type
NPN
Mounting
Through Hole

ECCN / UNSPSC

Description
Value
ECCN:
EAR99
SCHEDULE B:
8541290080
HTSN:
8541290095
UNSPSC:
32111611
UNSPSC VERSION:
V15.1101
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