The MRF6P18190H is a N-Channel Enhancement-Mode Lateral MOSFET, Designed for W-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. H620To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.