The IS64WV12816DBLL are high-speed, 2,097,152-bit static RAMs organized as 131,072 words by 16 bits. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS64WV12816DBLL are packaged in the JEDEC standard 48-pin Mini BGA (6mm x 8mm).
High-speed access time: 8, 10, 12, 20 n
Low Active Power: 135 mW (typical)
Low Standby Power: 12 µW (typical) CMOS standby
Single power supply
Vdd 1.65V to 2.2V
Fully static operation: no clock or refresh required