Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into thestandard SOT-23 package to produce a HEXFET PowerMOSFET with the industry's smallest footprint. Thispackage, dubbed the Micro3, is ideal for applicationswhere printed circuit board space is at a premium. The lowprofile (<1.1mm) of the Micro3 allows it to fit easily intoextremely thin application environments such as portableelectronics and PCMCIA cards.