The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also available in six different low cost plastic surface mount package styles. The NE680's high fT makes it ideal for low voltage/low current applications, down to as low as 0.5 V / 0.5 mA. Ic max for the NE680 series is 35 mA.
High gain bandwidth product: ft = 10 GHz
Low noise figure: 1.7 db at 2 GHz 2.6 db at 4 GHz
High associated gain: 12.5 db at 2 GHz 8.0 db at 4 GHz