AT25DF512C-SSHNGU-B by Adesto | Flash Memory | Avnet AMERICAS
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AT25DF512C-SSHNGU-B

Adesto

Flash Serial-SPI 1.8V/2.5V/3.3V 512Kbit 512K x 1bit 8ns 8-Pin SOIC Tube

Manufacturer Part #: AT25DF512C-SSHNGU-B

Avnet Manufacturer Part #: AT25DF512C-SSHNGU-B


RoHS Compliant

Descriptions

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Information

The AT25DF512C is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF512C, with its page erase granularity it is ideal for data storage as well, eliminating the need for additional data storage devices.The erase block sizes of theAT25DF512C have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density.The device also contains a specialized OTP (One-Time Programmable) Security Register that can be used for purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc.Specifically designed for use in many different systems, the AT25DF512C supports read, program, and erase operations with a wide supply voltage range of 1.65V to 3.6V. No separate voltage is required for programming and erasing.

Key Features

  • Single 1.65V - 3.6V Supply
    • Serial Peripheral Interface (SPI) Compatible
    • Supports SPI Modes 0 and 3
    • Supports Dual Output Read
  • 104MHz Maximum Operating Frequency
    • Clock-to-Output (TV) of 6 ns
  • Flexible, Optimized Erase Architecture for Code + Data Storage Applications
    • Uniform 256-Byte Page erase
    • Uniform 4-Kbyte Block Erase
    • Uniform 32-Kbyte Block Erase
    • Full Chip Erase
  • Hardware Controlled Locking of Protected Sectors via WP Pin
  • 128-byte, One-Time Programmable (OTP) Security Register
    • 64 bytes factory programmed with a unique identifier
    • 64 bytes user programmable
  • Flexible Programming
    • Byte/Page Program (1 to 256 Bytes)
  • Fast Program and Erase Times
    • 1.25ms Typical Page Program (256 Bytes) Time
    • 50ms Typical 4-Kbyte Block Erase Time
    • 350ms Typical 32-Kbyte Block Erase Time
  • Automatic Checking and Reporting of Erase/Program Failures
  • Software Controlled Reset
  • JEDEC Standard Manufacturer and Device ID Read Methodology
  • Low Power Dissipation
    • 350nA Ultra Deep Power Down current (Typical)
    • 7.5μA Deep Power-Down Current (Typical)
    • 25uA Standby current (Typical)
    • 6mA Active Read Current (Typical)
  • Endurance: 100,000 Program/Erase Cycles
  • Data Retention: 20 Years
  • Temperature Range:-10°C to +85°C (1.65V to 3.6V), -40°C to +85° (1.7V to 3.6V)
  • Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
    • 8-lead SOIC (150-mil)
    • 8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)
    • 8-lead TSSOP Package

Technical Attributes

Description
Value
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Operating Temperature
-40 to 85 °C
Typical Operating Supply Voltage
1.8, 2.5, 3.3 V
Package Dimensions
5.05 x 3.99 x 1.5 mm
Erase Suspend/Resume Modes Support
No
Sector Size
4 x 16 KB
Maximum Operating Current
10 mA
ECC Support
No
Simultaneous Read/Write Support
No
Maximum Random Access Time
8 ns
Number of Words
512 kWords
Page Size
256 byte
Interface Type
Serial-SPI
Support of Common Flash Interface
No
Screening Level
Industrial
Lead Finish
Gold Over Nickel Palladium
Density
512 Kb
Pin Count
8
Supplier Package
SOIC
Program Current
16 mA
Number of Bits per Word
1 Bit
Maximum Programming Time
3.5/Page ms
Timing Type
Synchronous
Minimum Operating Supply Voltage
1.65 V
Boot Block
No
Block Organization
Symmetrical
Architecture
Sectored
Command Compatible
Yes
Maximum Processing Temperature
260 °C
Maximum Operating Supply Voltage
3.6 V
Maximum Erase Time
1.15/Chip s
Mounting
Surface Mount
MSL Level
1
Support of Page Mode
No

ECCN / UNSPSC

Description
Value
ECCN:
EAR99
SCHEDULE B:
8542320050
HTSN:
8542320050
UNSPSC:
32101622
UNSPSC VERSION:
V15.1101
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