SiC - Silicon Carbide Schottky Diodes

Silicon Carbide schottky diodes have the advantage of silicon carbide compound’s superior physical characteristics over Si, with 4 times better dynamic characteristics and 15% less forward voltage. They have the lowest reverse recovery time (trr) compared to the various types of fast recovery, ultrafast recovery, and super-fast recovery diodes. They also have the lowest forward voltage drop (VF). Silicon carbide is a compound semiconductor with more high level power characteristics than silicon, including a bandgap approximately three times greater, a dielectric breakdown field 10 times higher, and a thermal coefficient three times larger.
SiC - Silicon Carbide Schottky Diodes Products under Schottky Diodes

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