The SiC632A is integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density performance. Packaged in Vishay’s proprietary 5 mm x 5 mm MLP package, SiC632A enables voltage regulator designs to deliver up to 50 A continuous current per phase.
The internal power MOSFETs utilizes Vishay’s state-of-the-art Gen IV TrenchFET technology that delivers industry benchmark performance to significantly reduce switching and conduction losses.
The SiC632A incorporate an advanced MOSFET gate driver IC that features high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, a thermal warning (THWn) that alerts the system of excessive junction temperature, and zero current detection to improve light load efficiency. The drivers are also compatible with a wide range of PWM controllers and supports tri-state PWM, 3.3 V (SiC632A) PWM logic.
Thermally enhanced PowerPAK® MLP55-31L package
Vishay’s Gen IV MOSFET technology and a low-side MOSFET with integrated Schottky diode
Delivers up to 50 A continuous current
High efficiency performance
High frequency operation up to 1.5 MHz
Power MOSFETs optimized for 19 V input stage
3.3 V (SiC632A) PWM logic with tri-state and hold-off
Zero current detect control for light load efficiency improvement