The ILD621GB is multi-channel phototransistor optocoupler that use GaAs IRLED emitters and high gain NPN silicon phototransistors. These devices are constructed using double molded insulation technology. This assembly process offers a withstand test voltage of 7500 VDC.
The ILD621GB is well suited for CMOS interfacing given the CTRCEsat of 30 % minimum at IF of 1.0 mA. High gain linear operation is guaranteed by a minimum CTRCE of 100 % at 5.0 mA. The ILD621GB has a guaranteed CTRCE 50 % minimum at 5.0 mA. The transparent ion shield insures stable DC gain in applications such as power supply feedback circuits, where constant DC VIO voltages are present.
Alternate source to TLP621-2/-4 and TLP621GB-2/-4
High collector emitter voltage, BVCEO = 70 V
Dual and quad packages feature:
Lower pin and parts count
Better channel to channel CTR match
Improved common mode rejection
Isolation test voltage, 5300 VRMS
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC