These 10-bit buffers and bus drivers arespecifically designed to drive the capacitive inputcharacteristics of MOS DRAMs. They providehigh-performance bus interface for wide datapaths or buses carrying parity.
The 3-state control gate is a 2-input AND gate withactive-low inputs so if either output-enable (OE1or OE2) input is high, all ten outputs are in thehigh-impedance state. The outputs are also in thehigh-impedance state during power-up andpower-down conditions. The outputs remain in thehigh-impedance state while the device is powereddown.
The is characterized for operationover the full military temperature range of−55°C to 125°C. The SN74BCT2827 ischaracterized for operation from 0°C to 70°C.
BiCMOS Design Substantially Reduces ICCZ
Output Ports Have Equivalent 25-Ω Resistors; No External Resistors Are Required
Specifically Designed to Drive MOS DRAMs
3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
Flow-Through Architecture Optimizes PCB Layout
Power-Up High-Impedance State
ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)