This Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. This Schottky Rectifier is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Compact Package with J–Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over–Voltage Protection
Low Forward Voltage Drop
NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable