The SuperSOT-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
-1.1 A, -30 V, RDs(oN) = 0.3 0 @ VGs=-4.5 V RDs(ON) = 0.2 0 @ Vas=-10 V.
Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
High density cell design for extremely low RDs(ON).
Exceptional on-resistance and maximum DC current capability.