These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high-density applications, and eliminate the need for through-the-board mounting.
80% collector output current
Closely Matched Current Transfer Ratios
Minimum BVcE0 of 70 V Guaranteed
Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing
Safety and Regulatory Approvals: - UL1577, 2,500 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage