The MCT5211M devices consist of a high-efficiency AIGaAs infrared emitting diode coupled with an NPN phototransistor in a six-pin dual-in-line package. The devices are well suited for CMOS to LSTT/TTL inter-faces, offering 250% CTRcE(SAT) with 1 mA of LED input current. With an LED input current of 1.6 mA, data rates to 20K bits/s are possible. Both can easily interface LSTTL to LSTTL/TTL, and with use of an external base-to-emitter resistor data rates of 100K bits/s can be achieved.
High CTRcE(SAT) Comparable to Darlingtons
High Common Mode Transient Rejection: 5 kV/has
Data Rates Up to 150 kbits/s (NRZ)
Safety and Regulatory Approvals: - UL1577, 4,170 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage