These Dual 4 Input NAND Gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired.
Supply Voltage Range = 3.0 Vdc to 18 Vdc
All Outputs Buffered
Capable of Driving Two Low-power TTL Loads or One Low-power Schottky TTL Load Over the Rated Temperature Range.
Double Diode Protection on All Inputs
Pin-for-Pin Replacements for Corresponding CD4000 Series B Suffix Devices