The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of aMOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 deg C and 150 deg C. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
>100kHz Operation at 390V, 30A
200kHz Operation at 390V, 18A
600V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 12 deg C