The HGTG11N120CN is Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstage conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
43A, 1200V, TC = 25 deg C
1200V Switching SOA Capability
Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150 deg C