Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.
Maximum Junction Temperature: TJ = 175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.33 V (Typ.) @ IC = 40 A