This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
Max rDS(on) = 108 mΩ at VGS = 10 V, ID = 3.2 A
Max rDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package