This N-Channel MOSFET is produced using advanced PowerTrench process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely ow Junction-to-Ambient thermal resistance.
Max rDS(on) = 9.0 mΩ at VGS = 10 V, ID = 13 A
Max rDS(on) = 11.5 mΩ at VGS = 6 V, ID = 11 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery