This N-Channel MOSFET is produced using advanced PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Extended TJ rating to 175°C
Shielded Gate MOSFET Technology
Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A
Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery