This N-Channel MOSFET is produced using advanced Power Trench process that incorporates Shielded Gate technology. Advancements in both silicon and Dual Cool package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
Shielded Gate MOSFET Technology
Dual Cool™ Top Side Cooling PQFN package
Max rDS(on) = 7.5 mΩ at VGS = 10 V, ID = 14.5 A
Max rDS(on) = 12 mΩ at VGS = 6 V, ID = 11.5 A
High performance technology for extremely low rDS(on)