This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.
Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 26A
Max rDS(on) = 3.6mΩ at VGS = 4.5V, ID = 21.5A
Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
Next-Generation, Enhanced Body Diode Technology, Engineered for Soft Recovery